Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 207,00
€ 6,90 tk (torus 30) (ilma käibemaksuta)
€ 252,54
€ 8,418 tk (torus 30) (koos käibemaksuga)
30
€ 207,00
€ 6,90 tk (torus 30) (ilma käibemaksuta)
€ 252,54
€ 8,418 tk (torus 30) (koos käibemaksuga)
30
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 30 - 30 | € 6,90 | € 207,00 |
| 60 - 60 | € 6,60 | € 198,00 |
| 90+ | € 6,20 | € 186,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products