Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14

RS tootekood: 284-864Bränd: InfineonTootja Part nr.: IMYH200R024M1HXKSA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Päritoluriik

Malaysia

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Lao andmed ajutiselt ei ole saadaval.

€ 121,00

€ 121,00 tk (ilma käibemaksuta)

€ 147,62

€ 147,62 tk (koos käibemaksuga)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Valige pakendi tüüp

€ 121,00

€ 121,00 tk (ilma käibemaksuta)

€ 147,62

€ 147,62 tk (koos käibemaksuga)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
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1 - 9€ 121,00
10+€ 109,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Päritoluriik

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more