Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 4-Pin TO-247-4 IMZA65R057M1HXKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Series
CoolSiC
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.074 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Transistor Material
Silicon
Number of Elements per Chip
1
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€ 7,80
€ 7,80 tk (ilma käibemaksuta)
€ 9,52
€ 9,52 tk (koos käibemaksuga)
Standard
1
€ 7,80
€ 7,80 tk (ilma käibemaksuta)
€ 9,52
€ 9,52 tk (koos käibemaksuga)
Standard
1
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind |
|---|---|
| 1 - 4 | € 7,80 |
| 5 - 9 | € 7,40 |
| 10 - 24 | € 7,10 |
| 25 - 49 | € 6,80 |
| 50+ | € 6,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247-4
Series
CoolSiC
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.074 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Transistor Material
Silicon
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products