Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Series
CoolMOS CE
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
11.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Forward Diode Voltage
0.9V
Minimum Operating Temperature
-40 °C
Päritoluriik
China
Toote üksikasjad
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Palun kontrollige hiljem uuesti.
€ 0,728
tk (torus 450) (ilma käibemaksuta)
€ 0,888
tk (torus 450) (koos käibemaksuga)
450
€ 0,728
tk (torus 450) (ilma käibemaksuta)
€ 0,888
tk (torus 450) (koos käibemaksuga)
450
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
450 - 450 | € 0,728 | € 327,60 |
900 - 900 | € 0,691 | € 310,95 |
1350+ | € 0,647 | € 291,15 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.3 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220 FP
Series
CoolMOS CE
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
11.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Height
16.27mm
Forward Diode Voltage
0.9V
Minimum Operating Temperature
-40 °C
Päritoluriik
China
Toote üksikasjad
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.