N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1

RS tootekood: 171-1965Bränd: InfineonTootja Part nr.: IPB017N10N5ATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

IPB017N10N5

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 7,70

tk (pakis 5) (ilma käibemaksuta)

€ 9,394

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1
Valige pakendi tüüp

€ 7,70

tk (pakis 5) (ilma käibemaksuta)

€ 9,394

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 20€ 7,70€ 38,50
25 - 95€ 6,60€ 33,00
100 - 245€ 5,70€ 28,50
250 - 495€ 5,40€ 27,00
500+€ 4,80€ 24,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

IPB017N10N5

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more