Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
168 nC @ 10 V
Length
10.31mm
Maximum Operating Temperature
+175 °C
Series
IPB020N10N5
Minimum Operating Temperature
-55 °C
Height
4.57mm
Forward Diode Voltage
1.2V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 7,00
tk (pakis 5) (ilma käibemaksuta)
€ 8,54
tk (pakis 5) (koos käibemaksuga)
5
€ 7,00
tk (pakis 5) (ilma käibemaksuta)
€ 8,54
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 7,00 | € 35,00 |
25 - 95 | € 5,90 | € 29,50 |
100 - 245 | € 5,10 | € 25,50 |
250 - 495 | € 4,90 | € 24,50 |
500+ | € 4,35 | € 21,75 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
176 A
Maximum Drain Source Voltage
100 V
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
11.05mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
168 nC @ 10 V
Length
10.31mm
Maximum Operating Temperature
+175 °C
Series
IPB020N10N5
Minimum Operating Temperature
-55 °C
Height
4.57mm
Forward Diode Voltage
1.2V