Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1

RS tootekood: 262-5859Bränd: InfineonTootja Part nr.: IPB029N06NF2SATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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€ 1,85

tk (pakis 5) (ilma käibemaksuta)

€ 2,257

tk (pakis 5) (koos käibemaksuga)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Valige pakendi tüüp

€ 1,85

tk (pakis 5) (ilma käibemaksuta)

€ 2,257

tk (pakis 5) (koos käibemaksuga)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 45€ 1,85€ 9,25
50 - 120€ 1,70€ 8,50
125 - 245€ 1,55€ 7,75
250 - 495€ 1,45€ 7,25
500+€ 1,35€ 6,75

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC