N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 Infineon IPB065N15N3GATMA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
150 V
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.31mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Palun kontrollige hiljem uuesti.
€ 3,10
tk (rullis 1000) (ilma käibemaksuta)
€ 3,782
tk (rullis 1000) (koos käibemaksuga)
1000
€ 3,10
tk (rullis 1000) (ilma käibemaksuta)
€ 3,782
tk (rullis 1000) (koos käibemaksuga)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
150 V
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.31mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Toote üksikasjad
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products