N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1

RS tootekood: 171-1943Bränd: InfineonTootja Part nr.: IPB180N10S402ATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

IPB180N10S4-02

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

10.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

156 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 5,80

tk (pakis 5) (ilma käibemaksuta)

€ 7,076

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1
Valige pakendi tüüp

€ 5,80

tk (pakis 5) (ilma käibemaksuta)

€ 7,076

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB180N10S402ATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 20€ 5,80€ 29,00
25 - 95€ 4,90€ 24,50
100 - 245€ 4,25€ 21,25
250 - 495€ 4,00€ 20,00
500+€ 3,60€ 18,00

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Series

IPB180N10S4-02

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

10.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

156 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more