Infineon CoolMOS™ N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP IPB60R040CFD7ATMA1

RS tootekood: 222-4887Bränd: InfineonTootja Part nr.: IPB60R040CFD7ATMA1
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Lao andmed ajutiselt ei ole saadaval.

€ 7,70

€ 3,85 tk (pakis 2) (ilma käibemaksuta)

€ 9,39

€ 4,697 tk (pakis 2) (koos käibemaksuga)

Infineon CoolMOS™ N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP IPB60R040CFD7ATMA1
Valige pakendi tüüp

€ 7,70

€ 3,85 tk (pakis 2) (ilma käibemaksuta)

€ 9,39

€ 4,697 tk (pakis 2) (koos käibemaksuga)

Infineon CoolMOS™ N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP IPB60R040CFD7ATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more