N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1

RS tootekood: 171-1959Bränd: InfineonTootja Part nr.: IPB64N25S320ATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Series

IPB64N25S3-20

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 6,30

tk (pakis 5) (ilma käibemaksuta)

€ 7,686

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
Valige pakendi tüüp

€ 6,30

tk (pakis 5) (ilma käibemaksuta)

€ 7,686

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
5 - 5€ 6,30€ 31,50
10 - 20€ 5,30€ 26,50
25 - 45€ 5,00€ 25,00
50 - 120€ 4,65€ 23,25
125+€ 4,30€ 21,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Series

IPB64N25S3-20

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more