Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,792
tk (rullis) (ilma käibemaksuta)
€ 0,966
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 0,792
tk (rullis) (ilma käibemaksuta)
€ 0,966
tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Osta lahtiselt
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 100 - 240 | € 0,792 | € 7,92 |
| 250 - 490 | € 0,759 | € 7,59 |
| 500 - 990 | € 0,726 | € 7,26 |
| 1000+ | € 0,459 | € 4,59 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products