N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1

RS tootekood: 171-1945Bränd: InfineonTootja Part nr.: IPD200N15N3GATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Series

IPD200N15N3 G

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.57mm

Minimum Operating Temperature

-55 °C

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,50

tk (pakis 10) (ilma käibemaksuta)

€ 3,05

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Valige pakendi tüüp

€ 2,50

tk (pakis 10) (ilma käibemaksuta)

€ 3,05

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 10€ 2,50€ 25,00
20 - 40€ 2,00€ 20,00
50 - 90€ 1,85€ 18,50
100 - 240€ 1,75€ 17,50
250+€ 1,60€ 16,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Series

IPD200N15N3 G

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more