Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1

RS Stock No.: 753-3018Brand: InfineonManufacturers Part No.: IPD30N10S3L34ATMA1Distrelec Article No.: 30408789
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™-T

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

6.22mm

Height

2.3mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 8.82

€ 0.882 Each (In a Pack of 10) (Exc. Vat)

€ 10.94

€ 1.094 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10€ 8.82
20€ 17.64
30€ 20.25
40€ 27.00
50€ 33.75
60€ 40.50
70€ 47.25
80€ 54.00
90€ 60.75
100€ 67.50
110€ 74.25
120€ 81.00
130€ 71.50
140€ 77.00
150€ 82.50

€ 8.82

€ 0.882 Each (In a Pack of 10) (Exc. Vat)

€ 10.94

€ 1.094 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10€ 8.82
20€ 17.64
30€ 20.25
40€ 27.00
50€ 33.75
60€ 40.50
70€ 47.25
80€ 54.00
90€ 60.75
100€ 67.50
110€ 74.25
120€ 81.00
130€ 71.50
140€ 77.00
150€ 82.50

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
10 - 20€ 0.882€ 8.82
30 - 120€ 0.675€ 6.75
130 - 620€ 0.55€ 5.50
630 - 1240€ 0.534€ 5.34
1250+€ 0.522€ 5.22

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™-T

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

6.22mm

Height

2.3mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more