Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1

RS tootekood: 826-9109Bränd: InfineonTootja Part nr.: IPD50P04P413ATMA1
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 23,20

€ 0,928 tk (pakis 25) (ilma käibemaksuta)

€ 28,77

€ 1,151 tk (pakis 25) (koos käibemaksuga)

Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 25.

Tootmine -

Saadaval mitmekordselt 25.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

25

Saadaval mitmekordselt 25
25€ 23,20
50€ 36,15
75€ 54,22
100€ 72,30
125€ 84,62
150€ 101,55
175€ 118,48
200€ 135,40
225€ 152,32
250€ 157,75
275€ 173,52
300€ 189,30
325€ 205,08
350€ 220,85
375€ 236,62

€ 23,20

€ 0,928 tk (pakis 25) (ilma käibemaksuta)

€ 28,77

€ 1,151 tk (pakis 25) (koos käibemaksuga)

Infineon OptiMOS P P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 25.

Tootmine -

Saadaval mitmekordselt 25.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

25

Saadaval mitmekordselt 25
25€ 23,20
50€ 36,15
75€ 54,22
100€ 72,30
125€ 84,62
150€ 101,55
175€ 118,48
200€ 135,40
225€ 152,32
250€ 157,75
275€ 173,52
300€ 189,30
325€ 205,08
350€ 220,85
375€ 236,62

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
25 - 25€ 0,928€ 23,20
50 - 100€ 0,723€ 18,08
125 - 225€ 0,677€ 16,92
250 - 600€ 0,631€ 15,78
625+€ 0,584€ 14,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.3mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more