N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1

RS tootekood: 171-1948Bränd: InfineonTootja Part nr.: IPD600N25N3GATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Series

IPD600N25N3 G

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 2,45

tk (pakis 10) (ilma käibemaksuta)

€ 2,989

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1
Valige pakendi tüüp

€ 2,45

tk (pakis 10) (ilma käibemaksuta)

€ 2,989

tk (pakis 10) (koos käibemaksuga)

N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK Infineon IPD600N25N3GATMA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 10€ 2,45€ 24,50
20 - 40€ 2,05€ 20,50
50 - 90€ 1,90€ 19,00
100 - 240€ 1,80€ 18,00
250+€ 1,65€ 16,50

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Series

IPD600N25N3 G

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more