N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1

RS tootekood: 215-2517Bränd: InfineonTootja Part nr.: IPD80R900P7ATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

800V CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,596

tk (rullis 2500) (ilma käibemaksuta)

€ 0,727

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1

€ 0,596

tk (rullis 2500) (ilma käibemaksuta)

€ 0,727

tk (rullis 2500) (koos käibemaksuga)

N-Channel MOSFET, 6 A, 800 V, 3-Pin DPAK Infineon IPD80R900P7ATMA1
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

800 V

Series

800V CoolMOS™ P7

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more