Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm
€ 11,80
€ 5,90 tk (pakis 2) (ilma käibemaksuta)
€ 14,40
€ 7,198 tk (pakis 2) (koos käibemaksuga)
2
€ 11,80
€ 5,90 tk (pakis 2) (ilma käibemaksuta)
€ 14,40
€ 7,198 tk (pakis 2) (koos käibemaksuga)
2
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
2 - 8 | € 5,90 | € 11,80 |
10 - 18 | € 5,60 | € 11,20 |
20 - 48 | € 4,90 | € 9,80 |
50 - 98 | € 4,55 | € 9,10 |
100+ | € 4,20 | € 8,40 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4.57mm
Length
10.36mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
11.17mm