Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1

RS tootekood: 215-2539Bränd: InfineonTootja Part nr.: IPP60R099P7XKSA1
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

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Lao andmed ajutiselt ei ole saadaval.

€ 22,50

€ 4,50 tk (pakis 5) (ilma käibemaksuta)

€ 27,45

€ 5,49 tk (pakis 5) (koos käibemaksuga)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
Valige pakendi tüüp

€ 22,50

€ 4,50 tk (pakis 5) (ilma käibemaksuta)

€ 27,45

€ 5,49 tk (pakis 5) (koos käibemaksuga)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
5 - 20€ 4,50€ 22,50
25 - 45€ 3,80€ 19,00
50 - 120€ 3,55€ 17,75
125 - 245€ 3,30€ 16,50
250+€ 3,05€ 15,25

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more