Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 60 V, 8-Pin HSOF-8 IPT007N06NATMA1

RS tootekood: 178-7451Bränd: InfineonTootja Part nr.: IPT007N06NATMA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

10.1mm

Length

10.58mm

Typical Gate Charge @ Vgs

216 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1V

Height

2.4mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 8 600,00

€ 4,30 tk (rullis 2000) (ilma käibemaksuta)

€ 10 492,00

€ 5,246 tk (rullis 2000) (koos käibemaksuga)

Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 60 V, 8-Pin HSOF-8 IPT007N06NATMA1

€ 8 600,00

€ 4,30 tk (rullis 2000) (ilma käibemaksuta)

€ 10 492,00

€ 5,246 tk (rullis 2000) (koos käibemaksuga)

Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 60 V, 8-Pin HSOF-8 IPT007N06NATMA1
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

10.1mm

Length

10.58mm

Typical Gate Charge @ Vgs

216 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1V

Height

2.4mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more