N-Channel MOSFET, 31 A, 700 V, 3-Pin TO-247 Infineon IPW65R110CFDFKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
277.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
5.21mm
Transistor Material
Si
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Height
21.1mm
Toote üksikasjad
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Palun kontrollige hiljem uuesti.
€ 9,40
tk (ilma käibemaksuta)
€ 11,47
tk (koos käibemaksuga)
Standard
1
€ 9,40
tk (ilma käibemaksuta)
€ 11,47
tk (koos käibemaksuga)
Standard
1
Osta lahtiselt
| kogus | Ühikuhind |
|---|---|
| 1 - 4 | € 9,40 |
| 5 - 9 | € 9,20 |
| 10 - 14 | € 9,00 |
| 15 - 19 | € 8,70 |
| 20+ | € 8,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
277.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
5.21mm
Transistor Material
Si
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Height
21.1mm
Toote üksikasjad
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products