Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
4.83mm
Series
IRF1010EZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,561
tk (pakis 10) (ilma käibemaksuta)
€ 0,684
tk (pakis 10) (koos käibemaksuga)
10
€ 0,561
tk (pakis 10) (ilma käibemaksuta)
€ 0,684
tk (pakis 10) (koos käibemaksuga)
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
84 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
4.83mm
Series
IRF1010EZS
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V