Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
81 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.45V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 5 040,00
€ 1,05 tk (rullis 4800) (ilma käibemaksuta)
€ 6 249,60
€ 1,302 tk (rullis 4800) (koos käibemaksuga)
4800
€ 5 040,00
€ 1,05 tk (rullis 4800) (ilma käibemaksuta)
€ 6 249,60
€ 1,302 tk (rullis 4800) (koos käibemaksuga)
4800
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
81 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.45V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products