Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Width
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.5mm
Series
IRF7807ZPbF
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,273
tk (rullis 4000) (ilma käibemaksuta)
€ 0,333
tk (rullis 4000) (koos käibemaksuga)
4000
€ 0,273
tk (rullis 4000) (ilma käibemaksuta)
€ 0,333
tk (rullis 4000) (koos käibemaksuga)
4000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
18.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.25V
Minimum Gate Threshold Voltage
1.35V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.2 nC @ 4.5 V
Width
4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.5mm
Series
IRF7807ZPbF