P-Channel MOSFET, 16 A, 30 V, 8-Pin SOIC Infineon IRF9317PBF
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
3.99mm
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 23,35
€ 0,467 tk (torus) (ilma käibemaksuta)
€ 28,95
€ 0,579 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
50
€ 23,35
€ 0,467 tk (torus) (ilma käibemaksuta)
€ 28,95
€ 0,579 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 50 - 90 | € 0,467 | € 4,67 |
| 100 - 190 | € 0,419 | € 4,19 |
| 200 - 490 | € 0,369 | € 3,69 |
| 500+ | € 0,332 | € 3,32 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Width
3.99mm
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products