Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF

RS tootekood: 162-3296Bränd: InfineonTootja Part nr.: IRF9910TRPBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.55V

Minimum Gate Threshold Voltage

1.65V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Width

4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Height

1.5mm

Series

IRF9910

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,711

tk (pakis 10) (ilma käibemaksuta)

€ 0,867

tk (pakis 10) (koos käibemaksuga)

Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
Valige pakendi tüüp

€ 0,711

tk (pakis 10) (ilma käibemaksuta)

€ 0,867

tk (pakis 10) (koos käibemaksuga)

Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Pakend
10 - 90€ 0,711€ 7,11
100 - 240€ 0,562€ 5,62
250 - 490€ 0,526€ 5,26
500 - 990€ 0,49€ 4,90
1000+€ 0,455€ 4,55

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.55V

Minimum Gate Threshold Voltage

1.65V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

±20 V

Width

4mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 4.5 V

Height

1.5mm

Series

IRF9910

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more