N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF

RS tootekood: 178-1455Bränd: InfineonTootja Part nr.: IRFI530NPBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

9.8mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,50

tk (torus 50) (ilma käibemaksuta)

€ 1,83

tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF

€ 1,50

tk (torus 50) (ilma käibemaksuta)

€ 1,83

tk (torus 50) (koos käibemaksuga)

N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
50 - 50€ 1,50€ 75,00
100 - 200€ 1,45€ 72,50
250+€ 1,30€ 65,00

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

9.8mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more