N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF

RS tootekood: 124-9022Bränd: InfineonTootja Part nr.: IRFP4668PBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

161 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Minimum Operating Temperature

-55 °C

Height

20.7mm

Päritoluriik

Mexico

Toote üksikasjad

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 3,45

tk (torus 25) (ilma käibemaksuta)

€ 4,209

tk (torus 25) (koos käibemaksuga)

N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF

€ 3,45

tk (torus 25) (ilma käibemaksuta)

€ 4,209

tk (torus 25) (koos käibemaksuga)

N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC Infineon IRFP4668PBF
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

520 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Transistor Material

Si

Length

15.87mm

Typical Gate Charge @ Vgs

161 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.31mm

Minimum Operating Temperature

-55 °C

Height

20.7mm

Päritoluriik

Mexico

Toote üksikasjad

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more