P-Channel MOSFET, 13 A, 100 V, 3-Pin IPAK Infineon IRFU5410PBF

RS tootekood: 178-1512Bränd: InfineonTootja Part nr.: IRFU5410PBF
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

205 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.39mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

6.22mm

Päritoluriik

Mexico

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,902

tk (torus 75) (ilma käibemaksuta)

€ 1,10

tk (torus 75) (koos käibemaksuga)

P-Channel MOSFET, 13 A, 100 V, 3-Pin IPAK Infineon IRFU5410PBF

€ 0,902

tk (torus 75) (ilma käibemaksuta)

€ 1,10

tk (torus 75) (koos käibemaksuga)

P-Channel MOSFET, 13 A, 100 V, 3-Pin IPAK Infineon IRFU5410PBF
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Tuub
75 - 75€ 0,902€ 67,65
150 - 300€ 0,856€ 64,20
375+€ 0,771€ 57,82

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

205 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.39mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

6.22mm

Päritoluriik

Mexico

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more