Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF

RS tootekood: 830-3394Bränd: InfineonTootja Part nr.: IRLR8743TRPBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

135 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

39 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Lao andmed ajutiselt ei ole saadaval.

€ 9,93

€ 0,993 tk (pakis 10) (ilma käibemaksuta)

€ 12,11

€ 1,211 tk (pakis 10) (koos käibemaksuga)

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 10.

Tootmine -

Saadaval mitmekordselt 10.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

10

Saadaval mitmekordselt 10
10€ 9,93
20€ 19,86
30€ 29,79
40€ 39,72
50€ 47,20
60€ 56,64
70€ 66,08
80€ 75,52
90€ 84,96
100€ 90,50
110€ 99,55
120€ 108,60
130€ 117,65
140€ 126,70
150€ 135,75

€ 9,93

€ 0,993 tk (pakis 10) (ilma käibemaksuta)

€ 12,11

€ 1,211 tk (pakis 10) (koos käibemaksuga)

Infineon N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK IRLR8743TRPBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Standard

Valige pakendi tüüp

Standard - each

Saadaval mitmekordselt 10.

Tootmine -

Saadaval mitmekordselt 10.

Soovitatav suurte koguste tellimuste korral. Tooted on pakendatud masinatesse sisestamiseks, mis võimaldab teil parandada tootmise efektiivsust.

10

Saadaval mitmekordselt 10
10€ 9,93
20€ 19,86
30€ 29,79
40€ 39,72
50€ 47,20
60€ 56,64
70€ 66,08
80€ 75,52
90€ 84,96
100€ 90,50
110€ 99,55
120€ 108,60
130€ 117,65
140€ 126,70
150€ 135,75

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Pakend
10 - 40€ 0,993€ 9,93
50 - 90€ 0,944€ 9,44
100 - 240€ 0,905€ 9,05
250 - 490€ 0,864€ 8,64
500+€ 0,806€ 8,06

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

135 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

39 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more