N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1

RS tootekood: 171-1920Bränd: InfineonTootja Part nr.: SPA20N60C3XKSA1
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

20.7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Series

SPA20N60C3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

34.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

4.85mm

Number of Elements per Chip

1

Forward Diode Voltage

0

Typical Power Gain

0

Height

16.15mm

Minimum Operating Temperature

-55 °C

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 5,40

tk (pakis 2) (ilma käibemaksuta)

€ 6,588

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1

€ 5,40

tk (pakis 2) (ilma käibemaksuta)

€ 6,588

tk (pakis 2) (koos käibemaksuga)

N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Pakend
2 - 8€ 5,40€ 10,80
10 - 18€ 5,20€ 10,40
20 - 48€ 4,65€ 9,30
50 - 98€ 4,20€ 8,40
100+€ 3,95€ 7,90

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

20.7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Series

SPA20N60C3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

34.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

4.85mm

Number of Elements per Chip

1

Forward Diode Voltage

0

Typical Power Gain

0

Height

16.15mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more