N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 Infineon SPW11N80C3FKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
CoolMOS C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.03mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Width
5.16mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
21.1mm
Päritoluriik
Germany
Toote üksikasjad
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Palun kontrollige hiljem uuesti.
€ 2,75
tk (torus 30) (ilma käibemaksuta)
€ 3,355
tk (torus 30) (koos käibemaksuga)
30
€ 2,75
tk (torus 30) (ilma käibemaksuta)
€ 3,355
tk (torus 30) (koos käibemaksuga)
30
Osta lahtiselt
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 30 - 30 | € 2,75 | € 82,50 |
| 60 - 120 | € 2,70 | € 81,00 |
| 150 - 270 | € 2,60 | € 78,00 |
| 300+ | € 2,50 | € 75,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
CoolMOS C3
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
16.03mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Width
5.16mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
21.1mm
Päritoluriik
Germany
Toote üksikasjad
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products