N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF

RS tootekood: 650-4097Bränd: International RectifierTootja Part nr.: IRF7807ZPBF
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.5mm

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Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
€ 0,936tk (pakis 10) (ilma käibemaksuta)
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P.O.A.

tk (pakis 5) (ilma käibemaksuta)

N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF
Valige pakendi tüüp

P.O.A.

tk (pakis 5) (ilma käibemaksuta)

N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
€ 0,936tk (pakis 10) (ilma käibemaksuta)

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.5mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada
Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
€ 0,936tk (pakis 10) (ilma käibemaksuta)