N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X

RS tootekood: 146-4407Bränd: IXYSTootja Part nr.: IXFA4N85X
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

850 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

10.92mm

Length

10.41mm

Typical Gate Charge @ Vgs

7 @ 10 V nC

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

4.7mm

PRICED TO CLEAR

Yes

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,572

tk (pakis 5) (ilma käibemaksuta)

€ 0,698

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X

€ 0,572

tk (pakis 5) (ilma käibemaksuta)

€ 0,698

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X
Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

850 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

10.92mm

Length

10.41mm

Typical Gate Charge @ Vgs

7 @ 10 V nC

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

4.7mm

PRICED TO CLEAR

Yes

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more