IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
1200 V
Series
HiperFET, Polar
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
460 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
960 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
225 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 980,00
€ 39,20 tk (torus 25) (ilma käibemaksuta)
€ 1 215,20
€ 48,608 tk (torus 25) (koos käibemaksuga)
25
€ 980,00
€ 39,20 tk (torus 25) (ilma käibemaksuta)
€ 1 215,20
€ 48,608 tk (torus 25) (koos käibemaksuga)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
1200 V
Series
HiperFET, Polar
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
460 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
960 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
225 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products