IXYS HiperFET N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
500 V
Series
HiperFET
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 695,00
€ 27,80 tk (torus 25) (ilma käibemaksuta)
€ 847,90
€ 33,916 tk (torus 25) (koos käibemaksuga)
25
€ 695,00
€ 27,80 tk (torus 25) (ilma käibemaksuta)
€ 847,90
€ 33,916 tk (torus 25) (koos käibemaksuga)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
500 V
Series
HiperFET
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products