IXYS HiperFET N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXFN24N100

RS tootekood: 146-1694Bränd: IXYSTootja Part nr.: IXFN24N100
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

568 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.42mm

Length

38.23mm

Typical Gate Charge @ Vgs

267 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Toote üksikasjad

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Lao andmed ajutiselt ei ole saadaval.

€ 540,00

€ 54,00 tk (torus 10) (ilma käibemaksuta)

€ 658,80

€ 65,88 tk (torus 10) (koos käibemaksuga)

IXYS HiperFET N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXFN24N100

€ 540,00

€ 54,00 tk (torus 10) (ilma käibemaksuta)

€ 658,80

€ 65,88 tk (torus 10) (koos käibemaksuga)

IXYS HiperFET N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXFN24N100
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

568 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.42mm

Length

38.23mm

Typical Gate Charge @ Vgs

267 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Toote üksikasjad

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more