Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
1000 V
Series
HiperFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
568 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.42mm
Length
38.23mm
Typical Gate Charge @ Vgs
267 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 540,00
€ 54,00 tk (torus 10) (ilma käibemaksuta)
€ 658,80
€ 65,88 tk (torus 10) (koos käibemaksuga)
10
€ 540,00
€ 54,00 tk (torus 10) (ilma käibemaksuta)
€ 658,80
€ 65,88 tk (torus 10) (koos käibemaksuga)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
1000 V
Series
HiperFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
568 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.42mm
Length
38.23mm
Typical Gate Charge @ Vgs
267 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.6mm
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS