Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y4 M5
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 61,50
tk (ilma käibemaksuta)
€ 75,03
tk (koos käibemaksuga)
1
€ 61,50
tk (ilma käibemaksuta)
€ 75,03
tk (koos käibemaksuga)
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 4 | € 61,50 |
5 - 9 | € 54,50 |
10 - 24 | € 53,00 |
25+ | € 51,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSMaximum Continuous Collector Current
90 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y4 M5
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Single
Dimensions
94 x 34 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Toote üksikasjad
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.