N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD IXYS MMIX1T600N04T2
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
23.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
25.25mm
Typical Gate Charge @ Vgs
590 nC @ 10 V
Height
5.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
Germany
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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No hidden fees!
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Palun kontrollige hiljem uuesti.
€ 768,00
€ 38,40 tk (torus 20) (ilma käibemaksuta)
€ 936,96
€ 46,848 tk (torus 20) (koos käibemaksuga)
20
€ 768,00
€ 38,40 tk (torus 20) (ilma käibemaksuta)
€ 936,96
€ 46,848 tk (torus 20) (koos käibemaksuga)
20
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
23.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
25.25mm
Typical Gate Charge @ Vgs
590 nC @ 10 V
Height
5.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Päritoluriik
Germany
Toote üksikasjad
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products