Littelfuse NGB8245NT4G IGBT, 50 A 500 V, 3-Pin D2PAK (TO-263), Surface Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
LittelfuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
500 V
Maximum Gate Emitter Voltage
500V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
9.65 x 10.29 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Palun kontrollige hiljem uuesti.
€ 1,65
tk (pakis 5) (ilma käibemaksuta)
€ 2,013
tk (pakis 5) (koos käibemaksuga)
5
€ 1,65
tk (pakis 5) (ilma käibemaksuta)
€ 2,013
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 45 | € 1,65 | € 8,25 |
| 50 - 95 | € 1,60 | € 8,00 |
| 100+ | € 1,55 | € 7,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
LittelfuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
500 V
Maximum Gate Emitter Voltage
500V
Maximum Power Dissipation
150 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
9.65 x 10.29 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Toote üksikasjad
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products