N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.39mm
Päritoluriik
China
Toote üksikasjad
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,407
tk (torus 50) (ilma käibemaksuta)
€ 0,497
tk (torus 50) (koos käibemaksuga)
50
€ 0,407
tk (torus 50) (ilma käibemaksuta)
€ 0,497
tk (torus 50) (koos käibemaksuga)
50
Osta lahtiselt
| kogus | Ühikuhind | Per Tuub |
|---|---|---|
| 50 - 200 | € 0,407 | € 20,35 |
| 250 - 950 | € 0,331 | € 16,55 |
| 1000 - 2450 | € 0,291 | € 14,55 |
| 2500+ | € 0,268 | € 13,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.39mm
Päritoluriik
China
Toote üksikasjad
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products