N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH

RS tootekood: 871-4915Bränd: MagnaChipTootja Part nr.: MDF11N60BTH
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

660 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.93mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

38.4 nC @ 10 V

Number of Elements per Chip

1

Height

16.13mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Toote üksikasjad

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 1,05

tk (torus 10) (ilma käibemaksuta)

€ 1,281

tk (torus 10) (koos käibemaksuga)

N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH
Valige pakendi tüüp

€ 1,05

tk (torus 10) (ilma käibemaksuta)

€ 1,281

tk (torus 10) (koos käibemaksuga)

N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Tuub
10 - 40€ 1,05€ 10,50
50 - 90€ 0,951€ 9,51
100 - 240€ 0,894€ 8,94
250 - 490€ 0,823€ 8,23
500+€ 0,758€ 7,58

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

660 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.93mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

38.4 nC @ 10 V

Number of Elements per Chip

1

Height

16.13mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Toote üksikasjad

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more