Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.51mm
Päritoluriik
Korea, Republic Of
Toote üksikasjad
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,80
tk (torus 10) (ilma käibemaksuta)
€ 2,196
tk (torus 10) (koos käibemaksuga)
10
€ 1,80
tk (torus 10) (ilma käibemaksuta)
€ 2,196
tk (torus 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
10 - 40 | € 1,80 | € 18,00 |
50 - 90 | € 1,60 | € 16,00 |
100 - 290 | € 1,45 | € 14,50 |
300 - 490 | € 1,45 | € 14,50 |
500+ | € 1,40 | € 14,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
153 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
223 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
16.51mm
Päritoluriik
Korea, Republic Of
Toote üksikasjad
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.