Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.75V
Height
1.5mm
Päritoluriik
China
Toote üksikasjad
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,251
tk (rullis 25) (ilma käibemaksuta)
€ 0,306
tk (rullis 25) (koos käibemaksuga)
25
€ 0,251
tk (rullis 25) (ilma käibemaksuta)
€ 0,306
tk (rullis 25) (koos käibemaksuga)
25
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
25 - 225 | € 0,251 | € 6,28 |
250 - 475 | € 0,21 | € 5,25 |
500+ | € 0,186 | € 4,65 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.75V
Height
1.5mm
Päritoluriik
China
Toote üksikasjad
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.