N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P

RS tootekood: 841-047Bränd: MagnatecTootja Part nr.: BUZ900P
brand-logo
View all in MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

160 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-14 V, +14 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.26mm

Width

2.49mm

Transistor Material

Si

Height

21.46mm

Toote üksikasjad

N-Channel MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

P.O.A.

N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P
Valige pakendi tüüp

P.O.A.

N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

160 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-14 V, +14 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.26mm

Width

2.49mm

Transistor Material

Si

Height

21.46mm

Toote üksikasjad

N-Channel MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more