Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.08mm
Width
4.06mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
5.33mm
Toote üksikasjad
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
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€ 0,572
tk (pakis 25) (ilma käibemaksuta)
€ 0,698
tk (pakis 25) (koos käibemaksuga)
25
€ 0,572
tk (pakis 25) (ilma käibemaksuta)
€ 0,698
tk (pakis 25) (koos käibemaksuga)
25
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
25 - 75 | € 0,572 | € 14,30 |
100+ | € 0,518 | € 12,95 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.08mm
Width
4.06mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
5.33mm
Toote üksikasjad
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.