Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.85mm
Forward Diode Voltage
1.8V
Toote üksikasjad
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,50
tk (pakis 5) (ilma käibemaksuta)
€ 4,27
tk (pakis 5) (koos käibemaksuga)
5
€ 3,50
tk (pakis 5) (ilma käibemaksuta)
€ 4,27
tk (pakis 5) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Pakend |
---|---|---|
5 - 20 | € 3,50 | € 17,50 |
25 - 95 | € 3,40 | € 17,00 |
100+ | € 3,25 | € 16,25 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
1.1 A
Maximum Drain Source Voltage
250 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Depletion
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.1mm
Typical Gate Charge @ Vgs
7.04 nC @ 1.5 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.85mm
Forward Diode Voltage
1.8V
Toote üksikasjad
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.