N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215

RS tootekood: 103-8398Bränd: NexperiaTootja Part nr.: 2N7002,215
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

3mm

Number of Elements per Chip

1

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,06

tk (rullis 3000) (ilma käibemaksuta)

€ 0,073

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215

€ 0,06

tk (rullis 3000) (ilma käibemaksuta)

€ 0,073

tk (rullis 3000) (koos käibemaksuga)

N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia 2N7002,215
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhindPer Rull
3000 - 3000€ 0,06€ 180,00
6000 - 12000€ 0,059€ 177,00
15000 - 27000€ 0,057€ 171,00
30000 - 57000€ 0,055€ 165,00
60000+€ 0,054€ 162,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

3mm

Number of Elements per Chip

1

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more