Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

RS tootekood: 166-0610Bränd: NexperiaTootja Part nr.: BSH203,215
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Lao andmed ajutiselt ei ole saadaval.

€ 336,00

€ 0,112 tk (rullis 3000) (ilma käibemaksuta)

€ 409,92

€ 0,137 tk (rullis 3000) (koos käibemaksuga)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

€ 336,00

€ 0,112 tk (rullis 3000) (ilma käibemaksuta)

€ 409,92

€ 0,137 tk (rullis 3000) (koos käibemaksuga)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Päritoluriik

China

Toote üksikasjad

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more