N-Channel MOSFET, 150 mA, 100 V, 3-Pin SOT-23 Nexperia BSS123,215

RS tootekood: 792-0885PBränd: NexperiaTootja Part nr.: BSS123,215
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3mm

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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Palun kontrollige hiljem uuesti.

Lao andmed ajutiselt ei ole saadaval.

€ 0,143

tk (rullis) (ilma käibemaksuta)

€ 0,174

tk (rullis) (koos käibemaksuga)

N-Channel MOSFET, 150 mA, 100 V, 3-Pin SOT-23 Nexperia BSS123,215
Valige pakendi tüüp

€ 0,143

tk (rullis) (ilma käibemaksuta)

€ 0,174

tk (rullis) (koos käibemaksuga)

N-Channel MOSFET, 150 mA, 100 V, 3-Pin SOT-23 Nexperia BSS123,215
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Osta lahtiselt

kogusÜhikuhindPer Rull
100 - 100€ 0,143€ 14,30
200 - 400€ 0,11€ 11,00
500 - 900€ 0,086€ 8,60
1000 - 1900€ 0,082€ 8,20
2000+€ 0,077€ 7,70

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3mm

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Päritoluriik

China

Toote üksikasjad

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more